GL4100E0000F |
Sharp Microelectronics |
5,000 |
EMITTER IR 950NM 50MA RADIAL |
GL41A-E3/96 |
Vishay Semiconductor/Diodes Division |
5,000 |
DIODE GEN PURP 50V 1A DO213AB |
GL41A-E3/96 |
Vishay Semiconductor/Diodes Division |
11 |
DIODE GEN PURP 50V 1A DO213AB |
GL41A-E3/96 |
Vishay Semiconductor/Diodes Division |
11 |
DIODE GEN PURP 50V 1A DO213AB |
GL41A-E3/97 |
Vishay Semiconductor/Diodes Division |
35,000 |
DIODE GEN PURP 50V 1A DO213AB |
GL41A-E3/97 |
Vishay Semiconductor/Diodes Division |
47,639 |
DIODE GEN PURP 50V 1A DO213AB |
GL41A-E3/97 |
Vishay Semiconductor/Diodes Division |
47,639 |
DIODE GEN PURP 50V 1A DO213AB |
GL41A/54 |
Vishay Semiconductor/Diodes Division |
5,000 |
DIODE GEN PURP 50V 1A DO213AB |
GL41AE397 |
VISHAY |
30,000 |
Integrated Circuit |
GL41AHE3/96 |
Vishay Semiconductor/Diodes Division |
5,000 |
DIODE GEN PURP 50V 1A DO213AB |
GL41AHE3/97 |
Vishay Semiconductor/Diodes Division |
5,000 |
DIODE GEN PURP 50V 1A DO213AB |
GL41B-E3/96 |
Vishay Semiconductor/Diodes Division |
1,500 |
DIODE GEN PURP 100V 1A DO213AB |
GL41B-E3/96 |
Vishay Semiconductor/Diodes Division |
2,230 |
DIODE GEN PURP 100V 1A DO213AB |
GL41B-E3/96 |
Vishay Semiconductor/Diodes Division |
2,230 |
DIODE GEN PURP 100V 1A DO213AB |
GL41B-E3/97 |
Vishay Semiconductor/Diodes Division |
5,000 |
DIODE GEN PURP 100V 1A DO213AB |