IPD650P06NMSAUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

22A (Tc)

Drain to Source Voltage (Vdss) :

60V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 30V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

83W (Tc)

Rds On (Max) @ Id, Vgs :

65mOhm @ 22A, 10V

Series :

OptiMOS™

Supplier Device Package :

PG-TO252-3-313

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 1.04mA