TSM22P10CI C0G

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

22A (Tc)

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2250pF @ 30V

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-220-3 Full Pack, Isolated Tab

Part Status :

Obsolete

Power Dissipation (Max) :

48W (Tc)

Rds On (Max) @ Id, Vgs :

140mOhm @ 20A, 10V

Series :

-

Supplier Device Package :

ITO-220

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±25V

Vgs(th) (Max) @ Id :

3V @ 250µA