RQA0011DNS#G0
- Manufacturer
- Renesas Electronics America
- Product Category
- Transistors - FETs, MOSFETs - Single
- Description
- MOSFET N-CH HWSON2
- Manufacturer :
- Renesas Electronics America
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 3.8A (Ta)
- Drain to Source Voltage (Vdss) :
- 16V
- Drive Voltage (Max Rds On, Min Rds On) :
- -
- FET Feature :
- -
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C
- Package / Case :
- 3-DFN Exposed Pad
- Packaging :
- Tape & Reel (TR)
- Part Status :
- Obsolete
- Power Dissipation (Max) :
- 15W (Tc)
- Rds On (Max) @ Id, Vgs :
- -
- Series :
- -
- Supplier Device Package :
- 2-HWSON (5x4)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±5V
- Vgs(th) (Max) @ Id :
- 750mV @ 1mA
- Datasheets
- RQA0011DNS#G0
Manufacturer related products
Catalog related products
related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
RQA0002DNSTB-E | Renesas Electronics America | 5,000 | MOSFET N-CH HWSON2 |
RQA0004PXDQS#H1 | Renesas Electronics America | 5,000 | MOSFET N-CH UPAK |
RQA0005QXDQS#H1 | Renesas Electronics America | 5,000 | MOSFET N-CH UPAK |
RQA0009SXAQS#H1 | Renesas Electronics America | 5,000 | MOSFET N-CH UPAK |
RQA0009TXDQS#H1 | Renesas Electronics America | 5,000 | MOSFET N-CH UPAK |
RQA0010VXDQSTLE | Renesas | 30,000 | Integrated Circuit |