HAT2165HWS-E

Manufacturer :

Renesas Electronics America

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

55A (Ta)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

5180pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Package / Case :

SC-100, SOT-669

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power Dissipation (Max) :

30W (Tc)

Rds On (Max) @ Id, Vgs :

3.3mOhm @ 27.5A, 10V

Series :

-

Supplier Device Package :

5-LFPAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 1mA