2SJ668(TE16L1,NQ)

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

5A (Ta)

Drain to Source Voltage (Vdss) :

60V

Drive Voltage (Max Rds On, Min Rds On) :

4V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

20W (Tc)

Rds On (Max) @ Id, Vgs :

170mOhm @ 2.5A, 10V

Series :

U-MOSIII

Supplier Device Package :

PW-MOLD

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 1mA