STGYA120M65DF2
- Manufacturer
- STMicroelectronics
- Product Category
- Transistors - IGBTs - Single
- Description
- TRENCH GATE FIELD-STOP IGBT, M S
- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Current - Collector (Ic) (Max) :
- 160A
- Current - Collector Pulsed (Icm) :
- 360A
- Gate Charge :
- 420nC
- IGBT Type :
- NPT, Trench Field Stop
- Input Type :
- Standard
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- TO-247-3 Exposed Pad
- Packaging :
- Tube
- Part Status :
- Active
- Power - Max :
- 625W
- Reverse Recovery Time (trr) :
- 202ns
- Series :
- *
- Supplier Device Package :
- MAX247™
- Switching Energy :
- 1.8mJ (on), 4.41mJ (off)
- Td (on/off) @ 25°C :
- 66ns/185ns
- Test Condition :
- 400V, 120A, 4.7Ohm, 15V
- Vce(on) (Max) @ Vge, Ic :
- 1.95V @ 15V, 120A
- Voltage - Collector Emitter Breakdown (Max) :
- 650V
- Datasheet :
- STGYA120M65DF2
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