64-0055PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

160A (Tc)

Drain to Source Voltage (Vdss) :

60V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

4520pF @ 50V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Packaging :

Tube

Part Status :

Obsolete

Power Dissipation (Max) :

230W (Tc)

Rds On (Max) @ Id, Vgs :

4.2mOhm @ 75A, 10V

Series :

HEXFET®

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 150µA