APT95GR65JDU60
- Manufacturer
- Microsemi Corporation
- Product Category
- Transistors - IGBTs - Single
- Description
- INSULATED GATE BIPOLAR TRANSISTO
- Manufacturer :
- Microsemi Corporation
- Product Category :
- Transistors - IGBTs - Single
- Current - Collector (Ic) (Max) :
- 135A
- Current - Collector Pulsed (Icm) :
- 380A
- Gate Charge :
- 420nC
- IGBT Type :
- NPT
- Input Type :
- Standard
- Mounting Type :
- Chassis Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- SOT-227-4, miniBLOC
- Packaging :
- Bulk
- Part Status :
- Obsolete
- Power - Max :
- 446W
- Series :
- -
- Supplier Device Package :
- SOT-227
- Td (on/off) @ 25°C :
- 29ns/226ns
- Test Condition :
- 433V, 95A, 4.3Ohm, 15V
- Vce(on) (Max) @ Vge, Ic :
- 2.4V @ 15V, 95A
- Voltage - Collector Emitter Breakdown (Max) :
- 650V
- Datasheets
- APT95GR65JDU60
Manufacturer related products
Catalog related products
related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| APT90DR160HJ | Microsemi Corporation | 5,000 | BRIDGE RECT 1PHASE 1.6KV SOT227 |
| APT94N60L2C3G | Microsemi Corporation | 25 | MOSFET N-CH 600V 94A TO264 |
| APT94N65B2C3G | Microsemi Corporation | 5,000 | MOSFET N-CH 650V 94A TO-247 |
| APT94N65B2C6 | Microsemi Corporation | 5,000 | MOSFET N-CH 650V 95A T-MAX |
| APT95GR65B2 | Microsemi Corporation | 50 | IGBT 650V 208A 892W T-MAX |
| APT97N65LC6 | Microsemi Corporation | 5,000 | MOSFET N-CH 650V 97A TO-264 |
| APT9F100B | Microsemi Corporation | 5,000 | MOSFET N-CH 1000V 9A TO-247 |
| APT9F100S | Microsemi Corporation | 5,000 | MOSFET N-CH 1000V 9A D3PAK |
| APT9M100B | Microsemi Corporation | 5,000 | MOSFET N-CH 1000V 9A TO-247 |