TPC8014(TE12L,Q,M)

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

11A (Ta)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1860pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-SOIC (0.173", 4.40mm Width)

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power Dissipation (Max) :

1W (Ta)

Rds On (Max) @ Id, Vgs :

14mOhm @ 5.5A, 10V

Series :

-

Supplier Device Package :

8-SOP (5.5x6.0)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 1mA