PHM25NQ10T,518

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

30.7A (Tc)

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

26.6nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 20V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-VDFN Exposed Pad

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power Dissipation (Max) :

62.5W (Tc)

Rds On (Max) @ Id, Vgs :

30mOhm @ 10A, 10V

Series :

TrenchMOS™

Supplier Device Package :

8-HVSON (6x5)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 1mA