SIS612EDNT-T1-GE3

Manufacturer :

Vishay/Siliconix

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

50A (Tc)

Drain to Source Voltage (Vdss) :

20V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2060pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

PowerPAK® 1212-8S

Packaging :

Cut Tape (CT)

Part Status :

Obsolete

Power Dissipation (Max) :

3.7W (Ta), 52W (Tc)

Rds On (Max) @ Id, Vgs :

3.9mOhm @ 14A, 4.5V

Series :

TrenchFET®

Supplier Device Package :

PowerPAK® 1212-8S (3.3x3.3)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

1.2V @ 1mA