SIS778DN-T1-GE3

Manufacturer :

Vishay/Siliconix

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

35A (Tc)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

Schottky Diode (Body)

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

42.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1390pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-50°C ~ 150°C (TJ)

Package / Case :

PowerPAK® 1212-8

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power Dissipation (Max) :

52W (Tc)

Rds On (Max) @ Id, Vgs :

5mOhm @ 10A, 10V

Series :

-

Supplier Device Package :

PowerPAK® 1212-8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.2V @ 250µA