SUP60N02-4M5P-E3

Manufacturer :

Vishay/Siliconix

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

60A (Tc)

Drain to Source Voltage (Vdss) :

20V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

5950pF @ 10V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-220-3

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power Dissipation (Max) :

3.75W (Ta), 120W (Tc)

Rds On (Max) @ Id, Vgs :

4.5mOhm @ 20A, 10V

Series :

TrenchFET®

Supplier Device Package :

TO-220AB

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA