IRF8113GTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

17.2A (Ta)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

2910pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Packaging :

Cut Tape (CT)

Part Status :

Obsolete

Power Dissipation (Max) :

2.5W (Ta)

Rds On (Max) @ Id, Vgs :

5.6mOhm @ 17.2A, 10V

Series :

HEXFET®

Supplier Device Package :

8-SO

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.2V @ 250µA