R6012ANJTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

12A (Ta)

Drain to Source Voltage (Vdss) :

600V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape & Reel (TR)

Part Status :

Not For New Designs

Power Dissipation (Max) :

100W (Tc)

Rds On (Max) @ Id, Vgs :

420mOhm @ 6A, 10V

Series :

-

Supplier Device Package :

LPTS

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4.5V @ 1mA