APTM100DA33T1G
- Manufacturer
- Microsemi Corporation
- Product Category
- Transistors - FETs, MOSFETs - Single
- Description
- MOSFET N-CH 1000V 23A SP1
- Manufacturer :
- Microsemi Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 23A (Tc)
- Drain to Source Voltage (Vdss) :
- 1000V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 305nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 7868pF @ 25V
- Mounting Type :
- Chassis Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- SP1
- Packaging :
- Bulk
- Part Status :
- Active
- Power Dissipation (Max) :
- 390W (Tc)
- Rds On (Max) @ Id, Vgs :
- 396mOhm @ 18A, 10V
- Series :
- -
- Supplier Device Package :
- SP1
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Datasheet :
- APTM100DA33T1G
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