TK40E10K3,S1X(S

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

40A (Ta)

Drain to Source Voltage (Vdss) :

100V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 10V

Mounting Type :

Through Hole

Operating Temperature :

-

Package / Case :

TO-220-3

Packaging :

Tube

Part Status :

Active

Power Dissipation (Max) :

-

Rds On (Max) @ Id, Vgs :

15mOhm @ 20A, 10V

Series :

U-MOSIV

Supplier Device Package :

TO-220-3

Technology :

MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id :

4V @ 1mA