PHB38N02LT,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

44.7A (Tc)

Drain to Source Voltage (Vdss) :

20V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

15.1nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 20V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power Dissipation (Max) :

57.6W (Tc)

Rds On (Max) @ Id, Vgs :

16mOhm @ 25A, 5V

Series :

TrenchMOS™

Supplier Device Package :

D2PAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

12V

Vgs(th) (Max) @ Id :

1.5V @ 250µA