ISP650P06NMXTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

3.7A (Ta)

Drain to Source Voltage (Vdss) :

60V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 30V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

1.8W (Ta), 4.2W (Tc)

Rds On (Max) @ Id, Vgs :

65mOhm @ 3.7A, 10V

Series :

OptiMOS™

Supplier Device Package :

PG-SOT223-4

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 1.037mA