TK10V60W,LVQ

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

9.7A (Ta)

Drain to Source Voltage (Vdss) :

600V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

Super Junction

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 300V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

4-VSFN Exposed Pad

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

88.3W (Tc)

Rds On (Max) @ Id, Vgs :

380mOhm @ 4.9A, 10V

Series :

DTMOSIV

Supplier Device Package :

4-DFN-EP (8x8)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

3.7V @ 500µA