SUP60020E-GE3

Manufacturer :

Vishay/Siliconix

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

150A (Tc)

Drain to Source Voltage (Vdss) :

80V

Drive Voltage (Max Rds On, Min Rds On) :

7.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

227nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

10680pF @ 40V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-220-3

Part Status :

Active

Power Dissipation (Max) :

375W (Tc)

Rds On (Max) @ Id, Vgs :

2.4mOhm @ 30A, 10V

Series :

TrenchFET®

Supplier Device Package :

TO-220AB

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA