FQB50N06LTM

Manufacturer :

ON Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

52.4A (Tc)

Drain to Source Voltage (Vdss) :

60V

Drive Voltage (Max Rds On, Min Rds On) :

5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

1630pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

3.75W (Ta), 121W (Tc)

Rds On (Max) @ Id, Vgs :

21mOhm @ 26.2A, 10V

Series :

QFET®

Supplier Device Package :

D²PAK (TO-263AB)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250µA