TK160F10N1L,LQ

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

160A (Ta)

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

122nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

10100pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

175°C

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

375W (Tc)

Rds On (Max) @ Id, Vgs :

2.4mOhm @ 80A, 10V

Series :

U-MOSVIII-H

Supplier Device Package :

TO-220SM(W)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 1mA