TK18E10K3,S1X(S

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

18A (Ta)

Drain to Source Voltage (Vdss) :

100V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-220-3

Packaging :

Tube

Part Status :

Active

Power Dissipation (Max) :

-

Rds On (Max) @ Id, Vgs :

42mOhm @ 9A, 10V

Series :

U-MOSIV

Supplier Device Package :

TO-220-3

Technology :

MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id :

-