FCP650N80Z

Manufacturer :

ON Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

10A (Tc)

Drain to Source Voltage (Vdss) :

800V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1565pF @ 100V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-220-3

Packaging :

Tube

Part Status :

Active

Power Dissipation (Max) :

162W (Tc)

Rds On (Max) @ Id, Vgs :

650mOhm @ 4A, 10V

Series :

SuperFET® II

Supplier Device Package :

TO-220

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4.5V @ 800µA