TK12E80W,S1X
- Manufacturer
- Toshiba Semiconductor and Storage
- Product Category
- Transistors - FETs, MOSFETs - Single
- Description
- MOSFET N-CH 800V 11.5A TO220
- Manufacturer :
- Toshiba Semiconductor and Storage
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 11.5A (Ta)
- Drain to Source Voltage (Vdss) :
- 800V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1400pF @ 300V
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Part Status :
- Active
- Power Dissipation (Max) :
- 165W (Tc)
- Rds On (Max) @ Id, Vgs :
- 450mOhm @ 5.8A, 10V
- Series :
- DTMOSIV
- Supplier Device Package :
- TO-220
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 570µA
- Datasheet :
- TK12E80W,S1X
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