SI4101DY-T1-GE3
- Manufacturer
- Vishay/Siliconix
- Product Category
- Transistors - FETs, MOSFETs - Single
- Description
- MOSFET P-CH 30V 25.7A 8SOIC
- Manufacturer :
- Vishay/Siliconix
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 25.7A (Tc)
- Drain to Source Voltage (Vdss) :
- 30V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 203nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 8190pF @ 15V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-SOIC (0.154", 3.90mm Width)
- Packaging :
- Digi-Reel®
- Part Status :
- Active
- Power Dissipation (Max) :
- 6W (Tc)
- Rds On (Max) @ Id, Vgs :
- 6mOhm @ 15A, 10V
- Series :
- TrenchFET®
- Supplier Device Package :
- 8-SO
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250µA
- Datasheet :
- SI4101DY-T1-GE3
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