FQT1N80TF-WS

Manufacturer :

ON Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

200mA (Tc)

Drain to Source Voltage (Vdss) :

800V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

7.2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

195pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-261-3

Packaging :

Cut Tape (CT)

Part Status :

Active

Power Dissipation (Max) :

2.1W (Tc)

Rds On (Max) @ Id, Vgs :

20Ohm @ 100mA, 10V

Series :

QFET®

Supplier Device Package :

SOT-223-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 250µA