TSM80N1R2CH C5G

Manufacturer
Taiwan Semiconductor
Product Category
Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 800V 5.5A TO251
Manufacturer :
Taiwan Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
5.5A (Tc)
Drain to Source Voltage (Vdss) :
800V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
19.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
685pF @ 100V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Packaging :
Tube
Part Status :
Active
Power Dissipation (Max) :
110W (Tc)
Rds On (Max) @ Id, Vgs :
1.2Ohm @ 2.75A, 10V
Series :
-
Supplier Device Package :
TO-251 (IPAK)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
4V @ 250µA
Datasheet :
TSM80N1R2CH C5G

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