TPH3206LDGB
- Manufacturer
- Transphorm
- Product Category
- Transistors - FETs, MOSFETs - Single
- Description
- GANFET N-CH 650V 16A PQFN
- Manufacturer :
- Transphorm
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 16A (Tc)
- Drain to Source Voltage (Vdss) :
- 650V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 9.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 760pF @ 480V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 3-PowerDFN
- Packaging :
- Tube
- Part Status :
- Not For New Designs
- Power Dissipation (Max) :
- 81W (Tc)
- Rds On (Max) @ Id, Vgs :
- 180mOhm @ 11A, 8V
- Series :
- -
- Supplier Device Package :
- PQFN (8x8)
- Technology :
- GaNFET (Gallium Nitride)
- Vgs (Max) :
- ±18V
- Vgs(th) (Max) @ Id :
- 2.6V @ 500µA
- Datasheet :
- TPH3206LDGB
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