SCT3040KRC14

Manufacturer
ROHM Semiconductor
Product Category
Transistors - FETs, MOSFETs - Single
Description
1200V NCH SIC TRENCH MOSFET IN 4
Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
55A (Tc)
Drain to Source Voltage (Vdss) :
1200V
Drive Voltage (Max Rds On, Min Rds On) :
18V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
107nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds :
1337pF @ 800V
Mounting Type :
Through Hole
Operating Temperature :
175°C (TJ)
Package / Case :
TO-247-4
Packaging :
Tube
Part Status :
Active
Power Dissipation (Max) :
262W
Rds On (Max) @ Id, Vgs :
52mOhm @ 20A, 18V
Series :
-
Supplier Device Package :
TO-247-4L
Technology :
SiC (Silicon Carbide Junction Transistor)
Vgs (Max) :
+22V, -4V
Vgs(th) (Max) @ Id :
5.6V @ 10mA
Datasheet :
SCT3040KRC14

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