SQ2337ES-T1_GE3

Manufacturer :

Vishay/Siliconix

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2.2A (Tc)

Drain to Source Voltage (Vdss) :

80V

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 30V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

3W (Tc)

Rds On (Max) @ Id, Vgs :

290mOhm @ 1A, 4.5V

Series :

Automotive, AEC-Q101, TrenchFET®

Supplier Device Package :

SOT-23-3 (TO-236)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250µA