SSM6G18NU,LF

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2A (Ta)

Drain to Source Voltage (Vdss) :

20V

Drive Voltage (Max Rds On, Min Rds On) :

1.5V, 4.5V

FET Feature :

Schottky Diode (Isolated)

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

4.6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

6-WDFN Exposed Pad

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

1W (Ta)

Rds On (Max) @ Id, Vgs :

112mOhm @ 1A, 4.5V

Series :

-

Supplier Device Package :

6-UDFN (2x2)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1V @ 1mA