EPC2007C
- Manufacturer
- EPC
- Product Category
- Transistors - FETs, MOSFETs - Single
- Description
- GANFET TRANS 100V 6A BUMPED DIE
- Manufacturer :
- EPC
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 6A (Ta)
- Drain to Source Voltage (Vdss) :
- 100V
- Drive Voltage (Max Rds On, Min Rds On) :
- 5V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 2.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 220pF @ 50V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- Die
- Packaging :
- Cut Tape (CT)
- Part Status :
- Active
- Power Dissipation (Max) :
- -
- Rds On (Max) @ Id, Vgs :
- 30mOhm @ 6A, 5V
- Series :
- eGaN®
- Supplier Device Package :
- Die Outline (5-Solder Bar)
- Technology :
- GaNFET (Gallium Nitride)
- Vgs (Max) :
- +6V, -4V
- Vgs(th) (Max) @ Id :
- 2.5V @ 1.2mA
- Datasheet :
- EPC2007C
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EPC2007 | EPC | 5,000 | GANFET TRANS 100V 6A BUMPED DIE |
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