RW1E025RPT2CR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2.5A (Ta)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On, Min Rds On) :

4V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

5.2nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

480pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-563, SOT-666

Packaging :

Cut Tape (CT)

Part Status :

Not For New Designs

Power Dissipation (Max) :

700mW (Ta)

Rds On (Max) @ Id, Vgs :

75mOhm @ 2.5A, 10V

Series :

-

Supplier Device Package :

6-WEMT

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 1mA