SI9407BDY-T1-GE3

Manufacturer :

Vishay/Siliconix

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4.7A (Tc)

Drain to Source Voltage (Vdss) :

60V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 30V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Packaging :

Digi-Reel®

Part Status :

Active

Power Dissipation (Max) :

2.4W (Ta), 5W (Tc)

Rds On (Max) @ Id, Vgs :

120mOhm @ 3.2A, 10V

Series :

TrenchFET®

Supplier Device Package :

8-SO

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA