TP65H050WS

Manufacturer :

Transphorm

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

34A (Tc)

Drain to Source Voltage (Vdss) :

650V

Drive Voltage (Max Rds On, Min Rds On) :

12V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 400V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-247-3

Packaging :

Tube

Part Status :

Active

Power Dissipation (Max) :

119W (Tc)

Rds On (Max) @ Id, Vgs :

60mOhm @ 22A, 10V

Series :

-

Supplier Device Package :

TO-247-3

Technology :

GaNFET (Gallium Nitride)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4.8V @ 700µA