SI5906DU-T1-GE3
- Manufacturer
- Vishay/Siliconix
- Product Category
- Transistors - FETs, MOSFETs - Arrays
- Description
- MOSFET 2N-CH 30V 6A PPAK FET
- Manufacturer :
- Vishay/Siliconix
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 6A
- Drain to Source Voltage (Vdss) :
- 30V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 8.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 15V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- PowerPAK® ChipFET™ Dual
- Packaging :
- Digi-Reel®
- Part Status :
- Obsolete
- Power - Max :
- 10.4W
- Rds On (Max) @ Id, Vgs :
- 31mOhm @ 4.8A, 10V
- Series :
- TrenchFET®
- Supplier Device Package :
- PowerPAK® ChipFet Dual
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Datasheet :
- SI5906DU-T1-GE3
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SI5902BDC-T1-E3 | Vishay/Siliconix | 1,835 | MOSFET 2N-CH 30V 4A 1206-8 |
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