SIF912EDZ-T1-E3

Manufacturer :

Vishay/Siliconix

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

7.4A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual) Common Drain

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

PowerPAK® 2x5

Packaging :

Cut Tape (CT)

Part Status :

Obsolete

Power - Max :

1.6W

Rds On (Max) @ Id, Vgs :

19mOhm @ 7.4A, 4.5V

Series :

TrenchFET®

Supplier Device Package :

PowerPAK® (2x5)

Vgs(th) (Max) @ Id :

1.5V @ 250µA