SI9926BDY-T1-E3
- Manufacturer
- Vishay/Siliconix
- Product Category
- Transistors - FETs, MOSFETs - Arrays
- Description
- MOSFET 2N-CH 20V 6.2A 8-SOIC
- Manufacturer :
- Vishay/Siliconix
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 6.2A
- Drain to Source Voltage (Vdss) :
- 20V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-SOIC (0.154", 3.90mm Width)
- Packaging :
- Tape & Reel (TR)
- Part Status :
- Obsolete
- Power - Max :
- 1.14W
- Rds On (Max) @ Id, Vgs :
- 20mOhm @ 8.2A, 4.5V
- Series :
- TrenchFET®
- Supplier Device Package :
- 8-SO
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Datasheet :
- SI9926BDY-T1-E3
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