SI5509DC-T1-E3

Manufacturer :

Vishay/Siliconix

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

6.1A, 4.8A

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

6.6nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

455pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-SMD, Flat Lead

Packaging :

Digi-Reel®

Part Status :

Obsolete

Power - Max :

4.5W

Rds On (Max) @ Id, Vgs :

52mOhm @ 5A, 4.5V

Series :

TrenchFET®

Supplier Device Package :

1206-8 ChipFET™

Vgs(th) (Max) @ Id :

2V @ 250µA