SI7900AEDN-T1-GE3

Manufacturer :

Vishay/Siliconix

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

6A

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual) Common Drain

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

PowerPAK® 1212-8 Dual

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power - Max :

1.5W

Rds On (Max) @ Id, Vgs :

26mOhm @ 8.5A, 4.5V

Series :

TrenchFET®

Supplier Device Package :

PowerPAK® 1212-8 Dual

Vgs(th) (Max) @ Id :

900mV @ 250µA