SQ9945BEY-T1_GE3
- Manufacturer
- Vishay/Siliconix
- Product Category
- Transistors - FETs, MOSFETs - Arrays
- Description
- MOSFET 2N-CH 60V 5.4A
- Manufacturer :
- Vishay/Siliconix
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 5.4A
- Drain to Source Voltage (Vdss) :
- 60V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 470pF @ 25V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- 8-SOIC (0.154", 3.90mm Width)
- Packaging :
- Cut Tape (CT)
- Part Status :
- Active
- Power - Max :
- 4W
- Rds On (Max) @ Id, Vgs :
- 64mOhm @ 3.4A, 10V
- Series :
- TrenchFET®
- Supplier Device Package :
- 8-SO
- Vgs(th) (Max) @ Id :
- 2.5V @ 250µA
- Datasheet :
- SQ9945BEY-T1_GE3
Manufacturer related products
Catalog related products
related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
SQ9945AEY-T1-E3 | Vishay/Siliconix | 5,000 | MOSFET 2N-CH 60V 3.7A 8SOIC |
SQ9945BEY | SILKRON | 30,000 | Integrated Circuit |
SQ9945BEY-T1_GE3 | Vishay/Siliconix | 5,000 | MOSFET 2N-CH 60V 5.4A |
SQ9945BEY-T1_GE3 | Vishay/Siliconix | 1,036 | MOSFET 2N-CH 60V 5.4A |
SQ9945BEYT1GES | SIL | 30,000 | Integrated Circuit |