IPG16N10S4L61AATMA1
- Manufacturer
- Infineon Technologies
- Product Category
- Transistors - FETs, MOSFETs - Arrays
- Description
- MOSFET 2N-CH 8TDSON
- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 16A
- Drain to Source Voltage (Vdss) :
- 100V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 845pF @ 25V
- Mounting Type :
- Surface Mount, Wettable Flank
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- 8-PowerVDFN
- Packaging :
- Tape & Reel (TR)
- Part Status :
- Active
- Power - Max :
- 29W
- Rds On (Max) @ Id, Vgs :
- 61mOhm @ 16A, 10V
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Supplier Device Package :
- PG-TDSON-8-10
- Vgs(th) (Max) @ Id :
- 2.1V @ 90µA
- Datasheet :
- IPG16N10S4L61AATMA1
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