PMDPB42UN,115

Manufacturer
NXP Semiconductors
Product Category
Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 20V 3.9A HUSON6
Manufacturer :
NXP Semiconductors
Product Category :
Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
3.9A
Drain to Source Voltage (Vdss) :
20V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
3.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
185pF @ 10V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
6-UDFN Exposed Pad
Packaging :
Digi-Reel®
Part Status :
Obsolete
Power - Max :
510mW
Rds On (Max) @ Id, Vgs :
50mOhm @ 3.9A, 4.5V
Series :
-
Supplier Device Package :
DFN2020-6
Vgs(th) (Max) @ Id :
1V @ 250µA
Datasheet :
PMDPB42UN,115

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