SI5902BDC-T1-GE3
- Manufacturer
- Vishay/Siliconix
- Product Category
- Transistors - FETs, MOSFETs - Arrays
- Description
- MOSFET 2N-CH 30V 4A 1206-8
- Manufacturer :
- Vishay/Siliconix
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 4A
- Drain to Source Voltage (Vdss) :
- 30V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 220pF @ 15V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-SMD, Flat Lead
- Packaging :
- Tape & Reel (TR)
- Part Status :
- Active
- Power - Max :
- 3.12W
- Rds On (Max) @ Id, Vgs :
- 65mOhm @ 3.1A, 10V
- Series :
- TrenchFET®
- Supplier Device Package :
- 1206-8 ChipFET™
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Datasheet :
- SI5902BDC-T1-GE3
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Part | Manufacturer | Stock | Description |
---|---|---|---|
SI5902BDC-T1-E3 | Vishay/Siliconix | 5,000 | MOSFET 2N-CH 30V 4A 1206-8 |
SI5902BDC-T1-E3 | Vishay/Siliconix | 1,835 | MOSFET 2N-CH 30V 4A 1206-8 |
SI5902BDC-T1-E3 | Vishay/Siliconix | 1,835 | MOSFET 2N-CH 30V 4A 1206-8 |
SI5902BDC-T1-GE3 | Vishay/Siliconix | 9,171 | MOSFET 2N-CH 30V 4A 1206-8 |
SI5902BDC-T1-GE3 | Vishay/Siliconix | 9,171 | MOSFET 2N-CH 30V 4A 1206-8 |
SI5902BDCT1E3 | VISHAY | 30,000 | Integrated Circuit |
SI5902DC-T1-E3 | Vishay/Siliconix | 5,000 | MOSFET 2N-CH 30V 2.9A 1206-8 |
SI5902DC-T1-E3 | Vishay/Siliconix | 5,000 | MOSFET 2N-CH 30V 2.9A 1206-8 |
SI5902DC-T1-E3 | Vishay/Siliconix | 5,000 | MOSFET 2N-CH 30V 2.9A 1206-8 |
SI5902DC-T1-E3 | VISHAY | 30,000 | Integrated Circuit |
SI5903DC-T1-E3 | Vishay/Siliconix | 5,000 | MOSFET 2P-CH 20V 2.1A 1206-8 |
SI5903DC-T1-E3 | Vishay/Siliconix | 5,000 | MOSFET 2P-CH 20V 2.1A 1206-8 |
SI5903DC-T1-E3 | Vishay/Siliconix | 5,000 | MOSFET 2P-CH 20V 2.1A 1206-8 |
SI5903DC-T1-GE3 | Vishay/Siliconix | 5,000 | MOSFET 2P-CH 20V 2.1A 1206-8 |
SI5904DC-T1-E3 | Vishay/Siliconix | 5,000 | MOSFET 2N-CH 20V 3.1A 1206-8 |