SQJ940EP-T1_GE3

Manufacturer
Vishay/Siliconix
Product Category
Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 40V 15A PPAK SO-8
Manufacturer :
Vishay/Siliconix
Product Category :
Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
15A (Ta), 18A (Tc)
Drain to Source Voltage (Vdss) :
40V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds :
896pF @ 20V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
PowerPAK® SO-8 Dual
Packaging :
Tape & Reel (TR)
Part Status :
Active
Power - Max :
48W, 43W
Rds On (Max) @ Id, Vgs :
16mOhm @ 15A, 10V
Series :
Automotive, AEC-Q101, TrenchFET®
Supplier Device Package :
PowerPAK® SO-8 Dual Asymmetric
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Datasheet :
SQJ940EP-T1_GE3

Manufacturer related products

Catalog related products

related products

Part Manufacturer Stock Description
SQJ910AEP-T1_GE3 Vishay/Siliconix 5,000 MOSFET 2 N-CH 30V POWERPAK SO8
SQJ910AEP-T1_GE3 Vishay/Siliconix 2,780 MOSFET 2 N-CH 30V POWERPAK SO8
SQJ910AEP-T1_GE3 Vishay/Siliconix 2,780 MOSFET 2 N-CH 30V POWERPAK SO8
SQJ910AEP-T2_GE3 Vishay/Siliconix 5,000 DUAL N-CHANNEL 30-V (D-S) 175C M
SQJ912AEP-T1_GE3 Vishay/Siliconix 5,000 MOSFET 2N-CH 40V 30A PPAK SO-8
SQJ912AEP-T1_GE3 Vishay/Siliconix 487 MOSFET 2N-CH 40V 30A PPAK SO-8
SQJ912AEP-T1_GE3 Vishay/Siliconix 487 MOSFET 2N-CH 40V 30A PPAK SO-8
SQJ912BEP-T1_GE3 Vishay/Siliconix 5,000 MOSFET N-CH DUAL 40V PPSO-8L
SQJ912BEP-T1_GE3 Vishay/Siliconix 2,769 MOSFET N-CH DUAL 40V PPSO-8L
SQJ912BEP-T1_GE3 Vishay/Siliconix 2,769 MOSFET N-CH DUAL 40V PPSO-8L
SQJ914EP-T1_GE3 Vishay/Siliconix 5,000 MOSFET 2 N-CH 30V POWERPAK SO8
SQJ914EP-T1_GE3 Vishay/Siliconix 2,654 MOSFET 2 N-CH 30V POWERPAK SO8
SQJ914EP-T1_GE3 Vishay/Siliconix 2,654 MOSFET 2 N-CH 30V POWERPAK SO8
SQJ940EP-T1_GE3 Vishay/Siliconix 5,693 MOSFET 2N-CH 40V 15A PPAK SO-8
SQJ940EP-T1_GE3 Vishay/Siliconix 5,693 MOSFET 2N-CH 40V 15A PPAK SO-8