2N5012S
- Manufacturer
- Microsemi Corporation
- Product Category
- Transistors - Bipolar (BJT) - Single
- Description
- TRANSISTOR NPN TO-39
- Manufacturer :
- Microsemi Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 200mA
- Current - Collector Cutoff (Max) :
- 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 25mA, 10V
- Frequency - Transition :
- -
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Packaging :
- Bulk
- Part Status :
- Obsolete
- Power - Max :
- 1W
- Series :
- Military, MIL-PRF-19500/727
- Supplier Device Package :
- TO-39 (TO-205AD)
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 5mA, 25mA
- Voltage - Collector Emitter Breakdown (Max) :
- 700V
- Datasheets
- 2N5012S
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| 2N5013S | Microsemi Corporation | 5,000 | TRANSISTOR NPN TO-39 |
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