SI6562CDQ-T1-GE3

Manufacturer :

Vishay/Siliconix

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

6.7A, 6.1A

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-TSSOP (0.173", 4.40mm Width)

Packaging :

Digi-Reel®

Part Status :

Active

Power - Max :

1.6W, 1.7W

Rds On (Max) @ Id, Vgs :

22mOhm @ 5.7A, 4.5V

Series :

TrenchFET®

Supplier Device Package :

8-TSSOP

Vgs(th) (Max) @ Id :

1.5V @ 250µA